High-speed CMOS-compatible III-V on Si membrane photodetectors

The monolithic integration of power-efficient optoelectronic devices with CMOS circuits is critical for future on-chip optical communication. In such platforms, ultra-high-speed photodetectors operating at datacom wavelengths are essential to convert optical signals in the electrical domain. Here, we demonstrate ultra-compact high-speed III-V/Si photodetectors integrated on silicon photonics and exclusively fabricated with processes and materials compatible with CMOS foundries. The sub-femtofarad capacitance, high responsivity photodetectors demonstrate a bandwidth around 65 GHz and data reception at 100 GBd OOK. Their thickness and efficiency enable an integration in the back-end-of-line without using an amplifier, further reducing the power consumption of the link. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Automated summary

The article demonstrates ultra-compact high-speed III-V/Si photodetectors integrated on silicon photonics, showing high responsivity, bandwidth around 65 GHz, and data reception at 100 GBd OOK. These photodetectors are fabricated with processes and materials compatible with CMOS foundries, enabling integration in the back-end-of-line without using an amplifier to reduce power consumption.