期刊
OPTICS EXPRESS
卷 28, 期 24, 页码 36559-36567出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.410385
关键词
-
类别
资金
- Korea Institute of Science and Technology [2E30100]
- National Research Foundation of Korea [NRF-2017M1A2A2048904]
- National Research Foundation of Korea [2E30100] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We demonstrate flexible GaAs photodetector arrays that were hetero-epitaxially grown on a Si wafer for a new cost-effective and reliable wearable optoelectronics platform. A high crystalline quality GaAs layer was transferred onto a flexible foreign substrate and excellent retention of device performance was demonstrated by measuring the optical responsivities and dark currents. Optical simulation proves that the metal stacks used for wafer bonding serve as a back-reflector and enhance GaAs photodetector responsivity via a resonant-cavity effect. Device durability was also tested by bending 1000 times and no performance degradation was observed. This work paves a way for a cost-effective and flexible III-V optoelectronics technology with high durability. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据