Non-volatile polarization-insensitive 1 x 2 silicon optical switch using phase-change materials

In this paper, a non-volatile polarization-insensitive 1x2 silicon optical switch utilizing phase-change materials is presented. The presented device is composed of three polarization beam combiners/splitters, two directional couplers with phase change materials, and a polarization-insensitive waveguide crossing. By adjusting the phase state of phase-change material, polarization-insensitive switching behavior is realized. As an example, the proposed switch using Ge2Sb2Te5 is comprehensively optimized and analyzed based on particle swarm optimization algorithm and finite difference time domain method. The designed device can have a crosstalk of less than -15.98 dB and an insertion loss of smaller than 0.95 dB over the C-band in the case of TE polarization, while a maximum crosstalk of -13.53 dB and a maximum insertion loss of 1.37 dB can be obtained within the C-band in the case of TM polarization.

Automated summary

This paper presents a non-volatile polarization-insensitive 1x2 silicon optical switch using phase-change materials, achieving polarization-insensitive switching behavior. The device is optimized and analyzed for TE polarization, showing a crosstalk of less than -15.98 dB and an insertion loss of smaller than 0.95 dB, while for TM polarization, a maximum crosstalk of -13.53 dB and a maximum insertion loss of 1.37 dB can be obtained within the C-band.