4.7 Article

Continuous wave and SnSe2/PdSe2 passively Q-switched Nd:GdNbO4 laser under direct pumping

期刊

OPTICS AND LASER TECHNOLOGY
卷 133, 期 -, 页码 -

出版社

ELSEVIER SCI LTD
DOI: 10.1016/j.optlastec.2020.106558

关键词

Nd:GdNbO4; SnSe2; PdSe2; Direct pumping; Passively Q-switched

资金

  1. National Natural Science Foundation of China [61875047, 61505041, 51702322]
  2. Natural Science Foundation of Heilongjiang Province of China [YQ2019F006]
  3. Fundamental Research Funds for the Central Universities
  4. Heilongjiang Province Postdoctoral Foundation [LBH-Q18052]
  5. University Natural Science Research Project of Anhui Province of China [KJ2019ZD06]
  6. Chinese Academy of Sciences [141A01080302]
  7. Key Laboratory of Optoelectronic Materials Chemistry and Physics, Chinese Academy of Sciences [2008DP173016]

向作者/读者索取更多资源

The study demonstrated the performance of Nd:GdNbO4 laser under different pumping schemes and the behavior of two-dimensional nanosheets in passively Q-switched lasers.
In this paper, a continuous wave (CW) and two-dimensional (2D) tin diselenide (SnSe2) and palladium diselenide (PdSe2) passively Q-switched Nd:GdNbO4 laser under direct pumping was demonstrated for the first time. The CW laser performance under the pump at 879 nm was compared to that using traditional 808 nm pumping. The 2D SnSe2 and PdSe2 nanosheets were synthesized by chemical vapor deposition (CVD) technique. The optical properties and microstructures of two nanosheets were investigated. In the passively Q-switched operation, the highest repetition rate, narrowest pulse width, maximum pulse energy and peak power of SnSe2/Nd:GdNbO4 laser were 160 kHz, 555 ns, 2.3 mu J and 4.2 W, respectively. And for PdSe2/Nd:GdNbO4 laser, the corresponding values were 143 kHz, 530 ns, 3.7 mu J and 7.0 W, respectively.

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