Preparation and photoelectric properties of F-doped cuprous oxide thin films

F-doped Cu2O films were deposited on Cu sheet substrates by hydrothermal method with different doping concentrations of F. The structure, morphology, composition and forbidden bandwidth of the samples were characterized by XRD, SEM, EDS, UV-Vis and XPS. The photoelectric properties, capacitance-voltage and AC impedance characteristics were also studied. The undoped and F-doped Cu2O thin films are all p-type semiconductors. When the doping concentration of F is 0.002 mol/L, the preferential growth surfaces are (110), (111) and (200), and the crystallinity of (111) plane is optimal. After doping, the grain size of F-doped Cu2O is relatively uniform. The mass percentage of F element is 0.34% and the forbidden bandwidth reduces from 1.96 eV to 1.91 eV. Photovoltage and photocurrent density increase to 0.4457 V and 2.79 mA/cm(2), respectively. And the carrier concentration increases from 4.55 x 10(18) to 2.58 x 10(22) cm(-3). The resistance value under light reduces from 183.4 Omega to 55.8 Omega.

Automated summary

F-doped Cu2O films were deposited on Cu sheet substrates using hydrothermal method, and the influence of doping concentration on the film properties was studied. Doping improved the crystallinity and photoelectric properties of the films, resulting in increased photovoltage and photocurrent density.