Characterisation of the charge collection properties in a segmented planar HPGe detector

Segmented germanium semiconductor detectors provide excellent gamma-ray spectroscopic information whilst also being sensitive to the position of interactions within their active volume. Understanding the detector response to gamma-ray interactions throughout its volume is required for interpreting the signal output. This work is the first assessment of the response and charge collection properties of an electrically-cooled Mirion Technologies manufactured planar HPGe detector with boron implanted p(+) and amorphous germanium based n(+) strip contacts. The signal response of the detector as a function of gamma-ray interaction position has been characterised by performing collimated beam scans with 59.5 keV and 661.7 keV gamma-rays. A database of average signals, generated through the detector volume and across the detector surfaces, has been produced. A map of parameterised rise time response through depth has been generated and used to apply pulse shape analysis techniques, improving the position resolution within the detector.

Automated summary

This study evaluates the response and charge collection properties of a Mirion Technologies manufactured planar HPGe detector to gamma-ray interactions, characterizing the signal response through collimated beam scans and generating a database of average signals across the detector volume. A map of parameterized rise time response through depth is created to apply pulse shape analysis techniques, improving position resolution within the detector.