相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Large-scale spin-polarized DFT calculation of electronic properties of GaAs with defects
Mary Clare Escano et al.
MATERIALS RESEARCH EXPRESS (2019)
First-Principles Study of Point Defects in GaAs/AlAs Superlattice: the Phase Stability and the Effects on the Band Structure and Carrier Mobility
Ming Jiang et al.
NANOSCALE RESEARCH LETTERS (2018)
First-principles calculations reveal controlling principles for carrier mobilities in semiconductors
Yu-Ning Wu et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2016)
Phase Stability and Defect Physics of a Ternary ZnSnN2 Semiconductor: First Principles Insights
Shiyou Chen et al.
ADVANCED MATERIALS (2014)
Influence of Defects and Synthesis Conditions on the Photovoltaic Performance of Perovskite Semiconductor CsSnl3
Peng Xu et al.
CHEMISTRY OF MATERIALS (2014)
Antisites in III-V semiconductors: Density functional theory calculations
A. Chroneos et al.
JOURNAL OF APPLIED PHYSICS (2014)
Classification of Lattice Defects in the Kesterite Cu2ZnSnS4 and Cu2ZnSnSe4 Earth-Abundant Solar Cell Absorbers
Shiyou Chen et al.
ADVANCED MATERIALS (2013)
Vacancies and defect levels in III-V semiconductors
H. A. Tahini et al.
JOURNAL OF APPLIED PHYSICS (2013)
Defect physics of the kesterite thin-film solar cell absorber Cu2ZnSnS4
Shiyou Chen et al.
APPLIED PHYSICS LETTERS (2010)
Simple intrinsic defects in gallium arsenide
Peter A. Schultz et al.
MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING (2009)
Reliability of analytical potentials for point-defect simulation in GaAs
G Zollo et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2004)
Hybrid functionals based on a screened Coulomb potential
J Heyd et al.
JOURNAL OF CHEMICAL PHYSICS (2003)
Band parameters for III-V compound semiconductors and their alloys
I Vurgaftman et al.
JOURNAL OF APPLIED PHYSICS (2001)