期刊
NATURE PHOTONICS
卷 15, 期 3, 页码 238-244出版社
NATURE PORTFOLIO
DOI: 10.1038/s41566-020-00743-1
关键词
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资金
- NSFC [61725402, 51922049]
- National 'Ten Thousand Talents Plan' leading talents [W03020394]
- Six Top Talent Innovation teams of Jiangsu Province [TD-XCL-004]
- Distinguished Scientist Fellowship Program (DSFP) at King Saud University
- Natural Science Foundation of Jiangsu Province [BK20190443, BK20180020]
- National Key Research and Development Program of China [2016YFB0401701]
- Young Elite Scientists Sponsorship Program by Jiangsu CAST [JS19TJGC132574]
- Fundamental Research Funds for the Central Universities [30919011299, 30920032102, 30919012107]
- PAPD of Jiangsu Higher Education Institutions
- Department of Energy [DOE-SC0013957]
- National Science Foundation [NSF MRSEC 1719797]
- Washington Research Foundation innovation fellowship
- Mistletoe Foundation research fellowship
- Advanced Photon Source, a US Department of Energy (DOE) Office of Science User Facility [DEAC02-06CH11357]
Halide perovskite LEDs are a new type of white light-emitting diode that utilizes efficient and low-cost lighting technologies, featuring a single broadband emissive layer without the need for phosphors. These LEDs operate with high peak luminance and external quantum efficiency, with potential for further improvements in the future through advancements in fabrication technology and mechanistic understanding.
At present, electric lighting accounts for similar to 15% of global power consumption and thus the adoption of efficient, low-cost lighting technologies is important. Halide perovskites have been shown to be good emitters of pure red, green and blue light, but an efficient source of broadband white electroluminescence suitable for lighting applications is desirable. Here, we report a white light-emitting diode (LED) strategy based on solution-processed heterophase halide perovskites that, unlike GaN white LEDs, feature only one broadband emissive layer and no phosphor. Our LEDs operate with a peak luminance of 12,200 cd m(-2) at a bias of 6.6 V and a maximum external quantum efficiency of 6.5% at a current density of 8.3 mA cm(-2). Systematic in situ and ex situ characterizations reveal that the mechanism of efficient electroluminescence is charge injection into the alpha phase of CsPbI3, alpha to delta charge transfer and alpha-delta balanced radiative recombination. Future advances in fabrication technology and mechanistic understanding should lead to further improvements in device efficiency and luminance.
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