相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires grown by molecular beam epitaxy
Daniel Ruhstorfer et al.
APPLIED PHYSICS LETTERS (2020)
Ultrathin catalyst-free InAs nanowires on silicon with distinct 1D sub-band transport properties
F. del Giudice et al.
NANOSCALE (2020)
Room-Temperature Midwavelength Infrared InAsSb Nanowire Photodetector Arrays with Al2O3 Passivation
Dingkun Ren et al.
NANO LETTERS (2019)
Modeling selective-area growth of InAsSb nanowires
A. S. Sokolovskii et al.
NANOTECHNOLOGY (2019)
Evidence and control of unintentional As-rich shells in GaAs1-xPx nanowires
Romaric de Lepinau et al.
NANOTECHNOLOGY (2019)
Optical absorption of composition-tunable InGaAs nanowire arrays
J. Treu et al.
NANOTECHNOLOGY (2019)
Room-Temperature Mid-Infrared Emission from Faceted InAsSb Multi Quantum Wells Embedded in InAs Nanowires
Aiyeshah Alhodaib et al.
NANO LETTERS (2018)
Carrier concentration dependent photoluminescence properties of Si-doped InAs nanowires
M. Sonner et al.
APPLIED PHYSICS LETTERS (2018)
Connecting Composition-Driven Faceting with Facet-Driven Composition Modulation in GaAs-AlGaAs Core-Shell Nanowires
Nari Jeon et al.
NANO LETTERS (2018)
Engineering hybrid epitaxial InAsSb/Al nanowires for stronger topological protection
Joachim E. Sestoft et al.
PHYSICAL REVIEW MATERIALS (2018)
Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core-Multishell Nanowires
T. Stettner et al.
NANO LETTERS (2018)
Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics
Q. D. Zhuang et al.
NANOTECHNOLOGY (2017)
A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range
Estiak Ahmad et al.
SCIENTIFIC REPORTS (2017)
Multispectral absorptance from large-diameter InAsSb nanowire arrays in a single epitaxial growth on silicon
Mitchell Robson et al.
NANO FUTURES (2017)
Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon
Michael D. Thompson et al.
NANO LETTERS (2016)
From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires
Heidi Potts et al.
NANO LETTERS (2016)
Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy
J. Treu et al.
APPLIED PHYSICS LETTERS (2016)
New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays
Dingding Ren et al.
NANO LETTERS (2016)
Selective-Area MOCVD Growth and Carrier-Transport-Type Control of InAs(Sb)/GaSb Core-Shell Nanowires
Xianghai Ji et al.
NANO LETTERS (2016)
Topological Phases in InAs1-xSbx: From Novel Topological Semimetal to Majorana Wire
Georg W. Winkler et al.
PHYSICAL REVIEW LETTERS (2016)
Antimony Induced {112}A Faceted Triangular GaAs1-xSbx/InP Core/Shell Nanowires and Their Enhanced Optical Quality
Xiaoming Yuan et al.
ADVANCED FUNCTIONAL MATERIALS (2015)
Sb-Induced Phase Control of InAsSb Nanowires Grown by Molecular Beam Epitaxy
Q. D. Zhuang et al.
NANO LETTERS (2015)
High-Quality InAsSb Nanowires Grown by Catalyst-Free Selective-Area Metal-Organic Chemical Vapor Deposition
Alan C. Farrell et al.
NANO LETTERS (2015)
Controlling the morphology, composition and crystal structure in gold-seeded GaAs1-xSbx nanowires
Xiaoming Yuan et al.
NANOSCALE (2015)
Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1-x Sb x nanowires
E. A. Anyebe et al.
NANO RESEARCH (2015)
Flux dependent Sb-incorporation during molecular beam epitaxy of InAsSb
Wendy L. Sarney et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2015)
Effect of interwire separation on growth kinetics and properties of site-selective GaAs nanowires
D. Rudolph et al.
APPLIED PHYSICS LETTERS (2014)
The influence of growth temperature on Sb incorporation in InAsSb, and the temperature-dependent impact of Bi surfactants
W. L. Sarney et al.
JOURNAL OF CRYSTAL GROWTH (2014)
The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy
Wen-Na Du et al.
JOURNAL OF CRYSTAL GROWTH (2014)
Gold-Free Ternary III-V Antimonide Nanowire Arrays on Silicon: Twin-Free down to the First Bilayer
Sonia Conesa-Boj et al.
NANO LETTERS (2014)
Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon
Marion J. L. Sourribes et al.
NANO LETTERS (2014)
Growth and properties of InGaAs nanowires on silicon
Gregor Koblmueller et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2014)
Arsenic Pathways in Self-Catalyzed Growth of GaAs Nanowires
Mohammed Reda Ramdani et al.
CRYSTAL GROWTH & DESIGN (2013)
Quantum computing based on semiconductor nanowires
Sergey M. Frolov et al.
MRS BULLETIN (2013)
Quantized Conductance in an InSb Nanowire
Ilse van Weperen et al.
NANO LETTERS (2013)
Diameter-Dependent Photocurrent in InAsSb Nanowire Infrared Photodetectors
Johannes Svensson et al.
NANO LETTERS (2013)
Spontaneous Alloy Composition Ordering in GaAs-AlGaAs Core-Shell Nanowires
Daniel Rudolph et al.
NANO LETTERS (2013)
Phase Separation Induced by Au Catalysts in Ternary InGaAs Nanowires
Ya-Nan Guo et al.
NANO LETTERS (2013)
Synthesis and properties of antimonide nanowires
B. Mattias Borg et al.
NANOTECHNOLOGY (2013)
Role of microstructure on optical properties in high-uniformity In1-xGaxAs nanowire arrays: Evidence of a wider wurtzite band gap
Stefanie Morkoetter et al.
PHYSICAL REVIEW B (2013)
InAs-mediated growth of vertical InSb nanowires on Si substrates
Tianfeng Li et al.
NANOSCALE RESEARCH LETTERS (2013)
Diameter dependent optical emission properties of In As nanowires grown on Si
G. Koblmueller et al.
APPLIED PHYSICS LETTERS (2012)
High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO2/Si (111)
S. Hertenberger et al.
APPLIED PHYSICS LETTERS (2012)
InAs nanowire growth on oxide-masked ⟨111⟩ silicon
Mikael T. Bjoerk et al.
JOURNAL OF CRYSTAL GROWTH (2012)
One-Dimensional Quantum Confinement Effect Modulated Thermoelectric Properties in InAs Nanowires
Yuan Tian et al.
NANO LETTERS (2012)
From InSb Nanowires to Nanocubes: Looking for the Sweet Spot
Sebastien R. Plissard et al.
NANO LETTERS (2012)
Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis
Maria de la Mata et al.
NANO LETTERS (2012)
Rate-limiting mechanisms in high-temperature growth of catalyst-free InAs nanowires with large thermal stability
S. Hertenberger et al.
NANOTECHNOLOGY (2012)
Growth of InAs/InAsSb heterostructured nanowires
Daniele Ercolani et al.
NANOTECHNOLOGY (2012)
Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques
Tao Xu et al.
NANOTECHNOLOGY (2012)
Photonic design principles for ultrahigh-efficiency photovoltaics
Albert Polman et al.
NATURE MATERIALS (2012)
Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si
S. Hertenberger et al.
APPLIED PHYSICS LETTERS (2011)
Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays
T. Gotschke et al.
APPLIED PHYSICS LETTERS (2011)
Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy
B. Mattias Borg et al.
APPLIED PHYSICS LETTERS (2011)
Growth mechanism of InAs-InSb heterostructured nanowires grown by chemical beam epitaxy
Lorenzo Lugani et al.
JOURNAL OF CRYSTAL GROWTH (2011)
Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires
Dominik Kriegner et al.
NANO LETTERS (2011)
Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy
S. Hertenberger et al.
JOURNAL OF APPLIED PHYSICS (2010)
Growth and segregation of GaAs-AlxIn1-xP core-shell nanowires
Jakob B. Wagner et al.
JOURNAL OF CRYSTAL GROWTH (2010)
Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy
G. Koblmueller et al.
NANOTECHNOLOGY (2010)
Controlled growth of ternary alloy nanowires using metalorganic chemical vapor deposition
Sung K. Lim et al.
NANO LETTERS (2008)
Growth characteristics of GaAs nanowires obtained by selective area metal-organic vapour-phase epitaxy
Keitaro Ikejiri et al.
NANOTECHNOLOGY (2008)
Growth kinetics and crystal structure of semiconductor nanowires
V. G. Dubrovskii et al.
PHYSICAL REVIEW B (2008)
Self-directed growth of AlGaAs core-shell nanowires for visible light applications
Chen Chen et al.
NANO LETTERS (2007)
Synergetic nanowire growth
Magnus T. Borgstrom et al.
NATURE NANOTECHNOLOGY (2007)
Surfactant-related growth of InAs1-xSbx quantum structures on InP(001) by metalorganic vapor-phase epitaxy
Kenichi Kawaguchi et al.
JOURNAL OF CRYSTAL GROWTH (2006)
Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment
VG Dubrovskii et al.
PHYSICAL REVIEW B (2005)
Thermoelectric figure of merit and maximum power factor in III-V semiconductor nanowires
N Mingo
APPLIED PHYSICS LETTERS (2004)
Growth of Sb-based materials by MOVPE
F Dimroth et al.
JOURNAL OF CRYSTAL GROWTH (2003)