Real-time dose control for electron-beam lithography

Shot-to-shot, or pixel-to-pixel, dose variation during electron-beam lithography is a significant practical and fundamental problem. Dose variations associated with charging, electron source instability, optical system drift, and ultimately shot noise in the e-beam itself conspire to critical dimension variability, line width/edge roughness, and limited throughput. It would be an important improvement to e-beam based patterning technology if real-time feedback control of electron-dose were provided so that pattern quality and throughput would be improved beyond the shot noise limit. In this paper, we demonstrate control of e-beam dose based on the measurement of electron arrival at the sample where patterns are written, rather than from the source or another point in the electron optical column. Our results serve as the first steps towards real-time dose control and eventually overcoming the shot noise.

Automated summary

Shot-to-shot or pixel-to-pixel dose variation during electron-beam lithography is a significant practical and fundamental problem caused by various factors. Real-time feedback control of electron dose can improve pattern quality and throughput beyond the shot noise limit. This paper demonstrates a method of dose control based on measuring electron arrival at the sample, which is a crucial step towards real-time dose control and overcoming shot noise.