相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Single-Electron Double Quantum Dots in Bilayer Graphene
Luca Banszerus et al.
NANO LETTERS (2020)
Large, Tunable Valley Splitting and Single-Spin Relaxation Mechanisms in a Si/SixGe1-x Quantum Dot
Arne Hollmann et al.
PHYSICAL REVIEW APPLIED (2020)
Tunable Valley Splitting due to Topological Orbital Magnetic Moment in Bilayer Graphene Quantum Point Contacts
Yongjin Lee et al.
PHYSICAL REVIEW LETTERS (2020)
Quartet states in two-electron quantum dots in bilayer graphene
Angelika Knothe et al.
PHYSICAL REVIEW B (2020)
Excited States in Bilayer Graphene Quantum Dots
A. Kurzmann et al.
PHYSICAL REVIEW LETTERS (2019)
Two-axis quantum control of a fast valley qubit in silicon
Nicholas E. Penthorn et al.
NPJ QUANTUM INFORMATION (2019)
Coupled Quantum Dots in Bilayer Graphene
Marius Eich et al.
NANO LETTERS (2018)
Spin and Valley States in Gate-Defined Bilayer Graphene Quantum Dots
Marius Eich et al.
PHYSICAL REVIEW X (2018)
Influence of minivalleys and Berry curvature on electrostatically induced quantum wires in gapped bilayer graphene
Angelika Knothe et al.
PHYSICAL REVIEW B (2018)
Valleytronics in 2D materials
John R. Schaibley et al.
NATURE REVIEWS MATERIALS (2016)
Universal quantum computing with spin and valley states
Niklas Rohling et al.
NEW JOURNAL OF PHYSICS (2012)
Giant Fluctuations and Gate Control of the g-Factor in InAs Nanowire Quantum Dots
S. Csonka et al.
NANO LETTERS (2008)
Gate-induced insulating state in bilayer graphene devices
Jeroen B. Oostinga et al.
NATURE MATERIALS (2008)
Spin qubits in graphene quantum dots
Bjoern Trauzettel et al.
NATURE PHYSICS (2007)
Two-dimensional electrons occupying multiple valleys in AlAs
M. Shayegan et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2006)
Asymmetry gap in the electronic band structure of bilayer graphene
Edward McCann
PHYSICAL REVIEW B (2006)
Controlling the electronic structure of bilayer graphene
Taisuke Ohta et al.
SCIENCE (2006)
Tunable effective g factor in InAs nanowire quantum dots -: art. no. 201307
MT Björk et al.
PHYSICAL REVIEW B (2005)
A 90-nm logic technology featuring strained-silicon
SE Thompson et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2004)
Gigahertz electron spin manipulation using voltage-controlled g-tensor modulation
Y Kato et al.
SCIENCE (2003)
Gate-controlled electron g factor in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure
J Nitta et al.
APPLIED PHYSICS LETTERS (2003)
Electrical control of spin coherence in semiconductor nanostructures
G Salis et al.
NATURE (2001)
分享论文
