Electron energy loss spectroscopy and first-principles study of GaN via Zn doping

The electronic structure of GaN and GaN:Zn was investigated by electron energy loss spectroscopy and first principles calculations. In the low-loss spectrum, the interband transitions are assigned to the observed energy loss peaks. After Zn doping, impurity levels are introduced to the density of states and hybrid orbitals of N 2p and Zn 3d are formed around the Fermi level. In the nitrogen K-edge, an additional peak was observed due to the formation of donor defect states. A core-hole effect is believed to be significant for simulation of the N K-edge for both GaN and GaN:Zn.

Automated summary

The electronic structure of GaN and GaN:Zn was studied revealing the formation of impurity levels and donor defect states after Zn doping, with the core-hole effect playing a significant role in the simulation of the N K-edge for both materials.