Synthesis and characterization of gallium oxide in strong reducing growth ambient by chemical vapor deposition

Deposition of gallium oxide (Ga2O3) from oxide powder precursor by using the high-temperature chemical vapor deposition technique (CVD) has of ten eluded amorphous soda lime glass substrate because of its tendency to deform at high temperatures. Herein, Ga2O3/glass films have been systematically synthesized by the CVD route in the temperature range 850-1000 degrees C without deformation to the substrates. X-ray diffraction revealed Ga2O3 alpha-beta bi-phase with increasing crystalline quality and crystallite size due to rising deposition temperature. Field emission scanning electron microscopy results showed surfaces having facetted aggregates and increasing film thickness with rising temperature. Energy dispersive X-ray spectroscopy revealed increasing Ga and decreasing O contents with rising deposition temperature.

Automated summary

Ga2O3/glass films were successfully synthesized by CVD in the temperature range of 850-1000 degrees Celsius without substrate deformation. Increasing deposition temperature led to higher crystalline quality, thicker films, higher Ga content, and lower O content.