期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 121, 期 -, 页码 -出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2020.105375
关键词
BaBiO3-based perovskite; Cu-modified; NTC thermistor; Substrate temperature; Thin film
类别
资金
- Innovation Project of Guangxi Graduate Education, China [YCBZ2020060]
- Natural Science Foundation of Guangxi Province, China [2017GXNSFBA198093, 2017GXNSFBA198075]
- Science and Technology Project of Guangxi Province, China [201819074]
- National Natural Science Foundation of China, China [61801135, 61561011]
Cu-modified Ba-Bi-O-based perovskite-like NTC thermistor thin films were successfully prepared by RF magnetron sputtering method with different deposition temperatures, leading to optimized electrical properties and phase structures through temperature control.
Based on the formula of BaBi0.Cu-92(0).O-08(3), Cu-modified Ba-Bi-O-based perovskite-like negative temperature coefficient (NTC) thermistor thin films were successfully prepared by radio frequency (RF) magnetron sputtering method with the various deposition temperatures (25 degrees C, 100 degrees C, 200 degrees C and 250 degrees C). The effects of the substrate temperatures on the phase structures and electrical properties were respectively characterized and investigated by X-ray diffraction (XRD), resistance-temperature measurement, and complex impedance analysis for the Ba-Bi-O-based thin films. Additionally, the cross-sectional microstructures and grain morphologies of the BaBi0.Cu-92(0).O-08(3) thin films were analyzed by scanning electron microscope (SEM) and atomic force microscope (AFM). The XRD patterns results showed that the perovskite monoclinic structure with a small amount of BaBiO2.5 s phase could be obtained for the BaBiO3 thin film deposited at 200 degrees C, and also, the main crystalline phase was transferred from BaBiO2.82 to BaBiO2.5 when the BaBi0.Cu-92(0).O-08(3) thin films were deposited at 200 degrees C and 250 degrees C, respectively. Temperature dependent complex impedance spectroscopy was carried out to make clear the resistance contribution of grain (Rg), grain boundary (Rgb) and contact (Rs) response for the conduction mechanisms in the Ba-Bi-O-based thin film deposited at a given substrate temperature. Compared with the electrical properties of the BaBiO3 thin film deposited at 200 degrees C [such as the room-temperature resistivity (rho(25) similar to 1548 omega cm) and the thermistor constant (B-25/85-3245 K)], the better NTC characteristics of a lower rho(25) value of about 956 Omega cm and a higher B value of approximately 3480 K were found in the BaBi0.92Cu0.08O3 thin film deposited at a same temperature (200 degrees C). It is believed that the phase structures and electrical properties of the BaBiO3 perovskite-type NTC thermistor thin films could be adjusted and optimized by a trace amounts of Cu-ions substitutions and depositing at an appropriate substrate temperature, which also showed that such as these novel BaBiO3-based thin films are feasible with the extensive of actual applications for the NTC thermistors.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据