4.8 Article

Spin Hall Effect of Light with Near-Unity Efficiency in the Microwave

期刊

LASER & PHOTONICS REVIEWS
卷 15, 期 2, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/lpor.202000393

关键词

high efficiency; microwave; optical spin Hall effect; photonic spin Hall effect; spin– orbit coupling; Stokes polarimetry

资金

  1. National Research Foundation (NRF) - Ministry of Science and ICT (MSIT) of the Korean government [NRF-2019R1A2C3003129, CAMM-2019M3A6B3030637, NRF-2019R1A5A8080290]
  2. NRF - MSIT of the Korean government [NRF-2017R1A2B3012364, NRF-2014M3A6B3063709]
  3. NRF Global Ph.D. fellowship - Ministry of Education of the Korean government [NRF-2017H1A2A1043204]
  4. National Research Foundation of Korea [2017H1A2A1043204, 2019R1A5A8080290, 4120200313733, 2017R1A2B3012364, 2014M3A6B3063709, 2019R1A2C3003129] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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This study proposes a method to achieve a large SHEL and near-unity efficiency in the microwave spectrum using anisotropic impedance mismatching, and experimentally confirms spin-dependent splitting by measuring transmission coefficients and the spatial profile of Stokes parameters.
The spin Hall effect of light (SHEL) refers to a transverse and spin-dependent shift of light in real space at an optical interface. Previous studies of enhancing the SHEL have involved extremely low efficiency, and achieving a large SHEL and high efficiency simultaneously has never been reported. Here, an approach using anisotropic impedance mismatching to attain a large SHEL with near-unity efficiency in the microwave spectrum is proposed. A wire medium that has a near-unity transmission for one polarization and low transmission for the other is used to achieve high efficiency. The spin-dependent splitting is experimentally confirmed by measuring transmission coefficients and the spatial profile of Stokes parameters. The large SHEL with near-unity efficiency will enable highly efficient devices with spin-selective functionalities.

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