Quantum weak measurement of Goos-Hanchen shift in monolayer MoS2

We report the direct experimental evidence of the Goos-Hanchen (GH) shift in monolayer molybdenum disulphide (MoS2) for a Gaussian beam via the quantum weak measurement scheme. We demonstrate the dependence of the GH shift in monolayer MoS2 on the angle of incidence including the critical angle in the total internal reflection condition. We have also compared the results to the GH shift for single-layer graphene and plane glass-air interface. Our results may open up important applications of MoS2 in optical devices and sensor industry. (C) 2021 Optical Society of America

Automated summary

This study experimentally demonstrated the GH shift in monolayer molybdenum disulphide (MoS2) for a Gaussian beam using the quantum weak measurement scheme, showing its dependence on the angle of incidence. A comparison with single-layer graphene and plane glass-air interface was also conducted, revealing potential important applications of MoS2 in optical devices and sensor industry.