4.5 Article

Ab initio study of electronic and magnetic properties of Mn2RuZ/MgO (001) heterojunctions (Z = Al, Ge)

期刊

JOURNAL OF PHYSICS-CONDENSED MATTER
卷 33, 期 14, 页码 -

出版社

IOP Publishing Ltd
DOI: 10.1088/1361-648X/abdffc

关键词

Heusler alloy; spintronics; heterojunctions; ab initio study

资金

  1. JST CREST [JPMJCR17J5]
  2. CSRN, Tohoku University

向作者/读者索取更多资源

The study investigated the applicability of Heusler alloys in MgO-based magnetic tunnel junctions, as well as the electronic structure and interface states of Mn2RuZ alloys.
We studied the applicability of Heusler alloys Mn(2)RuZ (Z = Al, Ga, Ge, Si) to the electrode materials of MgO-based magnetic tunnel junctions. All these alloys possess Hg2CuTi-type inverse Heusler alloy structure and ferrimagnetic ground state. Our study reveals the half-metallic electronic structure with highly spin-polarized Delta(1) band, which is robust against atomic disorder. Next we studied the electronic structure of Mn2RuAl/MgO and Mn2RuGe/MgO heterojunctions. We found that the MnAl- or MnGe-terminated interface is energetically more favorable compared to the MnRu-terminated interface. Interfacial states appear at the Fermi level in the minority-spin gap for the Mn2RuGe/MgO junction. We discuss the origin of these interfacial states in terms of local environment around each constituent atom. On the other hand, in the Mn2RuAl/MgO junction, high spin polarization of bulk Mn2RuAl is preserved independent of its termination.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.5
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据