Photo-spin-voltaic effect in PtMn/Y3Fe5O12 thin films

The photo-spin-voltaic effect is revealed by the presence of a spin voltage generated by photons when a non-magnetic metal (e.g., Pt) is in close proximity to a ferrimagnetic insulator (e.g., Y3Fe5O12 (YIG)). This is attributed to the excited electrons and holes diffusing from the proximized layer near the interface to the metallic surface. By using a dual-ion-beam sputtering deposition technique, a metallic PtMn layer was deposited on YIG /Gd3Ga5O12 (GGG) (111) substrates. We report on the photo-induced-spin voltaic effect in a PtMn/YIG/GGG heterostructure. The sign of the photo-generated voltage was found to switch with magnetic field polarity and its intensity to decrease with increasing PtMn thickness. This indicates that spin-polarized electrons are confined near the interface in the metal. Photo-excitation of these carriers, together with spin-orbit coupling with Pt atoms, is at the origin of the measured transverse voltage. The design may find applications in antiferromagnetic spintronics.

Automated summary

The photo-spin-voltaic effect is observed when a non-magnetic metal is in close proximity to a ferrimagnetic insulator, generating a spin voltage from photons. By depositing a metallic layer on a specific substrate, the photo-induced voltage effect can be observed, with the voltage sign switching with magnetic field polarity and decreasing in intensity with increasing thickness of the metal layer. This design shows potential applications in antiferromagnetic spintronics.