Quantum defect-assisted multiphonon Raman scattering in metal halide perovskites

Quantum defects are essential to understand the non-radiative recombination processes in metal halide perovskites-based photovoltaic devices, in which Huang-Rhys factor, reflecting the coupling strength between the charge carrier and optical phonons, plays a key role in determining the non-radiative recombination via multiphonon processes. Herein, we theoretically present multiphonon Raman scattering intermediated by defects arising from the charge carrier of defect coupled with the longitudinal optical (LO) phonon in the deformation potential and Fro''

Automated summary

Quantum defects are crucial in understanding non-radiative recombination processes in metal halide perovskite-based photovoltaic devices, with the Huang-Rhys factor playing a key role in determining non-radiative recombination through multiphonon processes. Here, we theoretically propose multiphonon Raman scattering intermediated by defects associated with charge carriers coupled with longitudinal optical (LO) phonons in the deformation potential.