相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Cross-shaped markers for the preparation of site-specific transmission electron microscopy lamellae using focused ion beam techniques
T. J. O'Hanlon et al.
ULTRAMICROSCOPY (2020)
Beyond solid-state lighting: Miniaturization, hybrid integration, and applications of GaN nano- and micro-LEDs
Hutomo Suryo Wasisto et al.
APPLIED PHYSICS REVIEWS (2019)
Effects of V-pits covering layer position on the optoelectronic performance of InGaN green LEDs
Chen Xu et al.
JOURNAL OF SEMICONDUCTORS (2019)
An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits
Mengling Liu et al.
NANOMATERIALS (2018)
A review of gallium nitride LEDs for multigigabit-per-second visible light data communications
Sujan Rajbhandari et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2017)
GaN-based emissive microdisplays: A very promising technology for compact, ultra-high brightness display systems
Francois Templier
Journal of the Society for Information Display (2016)
Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions
S. Hammersley et al.
APPLIED PHYSICS LETTERS (2015)
Correlated high-resolution x-ray diffraction, photoluminescence, and atom probe tomography analysis of continuous and discontinuous InxGa1-xN quantum wells
Xiaochen Ren et al.
APPLIED PHYSICS LETTERS (2015)
What is the real value of diffusion length in GaN?
E. B. Yakimov
JOURNAL OF ALLOYS AND COMPOUNDS (2015)
Yellow-red emission from (Ga,In)N heterostructures
B. Damilano et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2015)
Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode
M. J. Wallace et al.
JOURNAL OF APPLIED PHYSICS (2014)
The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method
F. C-P Massabuau et al.
JOURNAL OF CRYSTAL GROWTH (2014)
Point defect characterization of group-III nitrides by using monoenergetic positron beams
Akira Uedono et al.
NANOSCALE LUMINESCENT MATERIALS 3 (2014)
The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes
R. A. Oliver et al.
APPLIED PHYSICS LETTERS (2013)
The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption
Nicolas Jouvet et al.
JOURNAL OF APPLIED PHYSICS (2013)
Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits
Shigetaka Tomiya et al.
APPLIED PHYSICS LETTERS (2011)
Imaging dislocations in gallium nitride across broad areas using atomic force microscopy
S. E. Bennett et al.
REVIEW OF SCIENTIFIC INSTRUMENTS (2010)
Enhanced efficiency and reduced spectral shift of green light-emitting-diode epitaxial structure with prestrained growth
Chi-Feng Huang et al.
JOURNAL OF APPLIED PHYSICS (2008)
Micro-LED arrays: a tool for two-dimensional neuron stimulation
V. Poher et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2008)
Role of gross well-width fluctuations in bright, green-emitting single InGaN/GaN quantum well structures
Nicole K. van der Laak et al.
APPLIED PHYSICS LETTERS (2007)
Misfit dislocation generation in InGaN epilayers on free-standing GaN
Rong Liu et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2006)
Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency
A Hangleiter et al.
PHYSICAL REVIEW LETTERS (2005)
Confocal microphotoluminescence of InGaN-based light-emitting diodes
K Okamoto et al.
JOURNAL OF APPLIED PHYSICS (2005)
InGaN-GaN multiquantum-well blue and green light-emitting diodes
SJ Chang et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2002)
分享论文
