Combined SEM-CL and STEM investigation of green InGaN quantum wells

The microstructure of green-emitting InGaN/GaN quantum well (QW) samples grown at different temperatures was studied using cross-section scanning transmission electron microscopy (STEM) and plan-view cathodoluminescence (CL). The sample with the lowest InGaN growth temperature exhibits microscale variations in the CL intensity across the sample surface. Using STEM analysis of such areas, the observed darker patches do not correspond to any observable extended defect. Instead, they are related to changes in the extent of gross-well width fluctuations in the QWs, with more brightly emitting regions exhibiting a high density of such fluctuations, whilst dimmer regions were seen to have InGaN QWs with a more uniform thickness.

Automated summary

By using STEM analysis, it was found that InGaN samples grown at lower temperatures exhibit microscale variations in the green-emitting surface, with brighter regions showing high density of gross-well width fluctuations, while dimmer regions have a more uniform thickness of InGaN QWs.