Evolution of the Electronic Properties of ZrX2 (X = S, Se, or Te) Thin Films under Varying Thickness

Probing the effects of thin-film thickness on transition metal dichalcogenides offer novel insights into their electronic properties and tunability, which leads to a new avenue of research and applications. A comprehensive first-principles study on thickness-dependent structural stabilities and electronic properties of ZrX2 (X = S, Se, or Te) thin films from 1 layer (L) to 6L and bulk was performed. The calculated formation energies show that ZrX2 adopts the 1T phase as the most stable structure. Furthermore, 1T-ZrS2 and ZrSe2 thin films and bulk are indirect semiconductors and their band gaps decrease as the number of layers is increased up to 6L, while 1T-ZrTe2 thin films and bulk are semimetallic. Interestingly, we demonstrate that the surface band structure of bulk and monolayer ZrTe2 under generalized gradient approximation + U and HSE06 methods is in excellent agreement with the angle-resolved photoelectron spectroscopy measurement. Finally, we discover the existence of van Hove singularities in strained 2L and unstrained 3L 1T-ZrS2 thin films, implying the existence of superconductivity in these thin films. These results showcase the tunable electronic properties of ZrX2 thin films because of thickness dependence and strain.

Automated summary

This study investigates the effects of thin-film thickness on transition metal dichalcogenides, revealing the tunability of electronic properties of ZrX2 thin films due to thickness dependence and strain. The research demonstrates that ZrX2 adopts the 1T phase as the most stable structure, with varying band gaps and the potential for superconductivity in certain thin films.