Ferroelectric and dielectric properties of BF-PT/LNO thin films on different substrates

Ferroelectric 0.7BiFeO(3)-0.3PbTiO(3) (BF-PT) thin films were prepared by the sol-gel method on Pt/Ti/SiO2/Si, stainless steel (SS) and Ti substrates, respectively, with LaNiO3 (LNO) buffer layers. The performance of the BF-PT films on SS is significantly better than that on the Ti substrates and is comparable to the films on the Pt/Ti/SiO2/Si substrates. The BF-PT films on SS substrates have the good crystallinity with a pure perovskite structure. Moreover, the dielectric loss and remnant polarization (P-r) of BF-PT on SS are of 4.48% (at the frequency of 10(3) Hz) and 28.9 mu C/cm(2), respectively, revealing good dielectric and ferroelectric properties. It is found that BF-PT deposited on SS has the good fatigue resistance relative to the films on Ti substrates. The reduction of polarization is of about 22% after the electrical switching of 1.33 x 10(8) cycles. Experiments show that BF-PT thin films deposited on SS substrates exhibit superior ferroelectric, dielectric, and fatigue resistance properties.

Automated summary

BF-PT thin films deposited on stainless steel substrates exhibit superior microstructure and excellent dielectric, ferroelectric properties, as well as outstanding fatigue resistance.