High-Quality β-Ga2O3 Films with Influence of Growth Temperature by Pulsed Laser Deposition for Solar-Blind Photodetectors

High-quality beta-Ga2O3 films were grown on (0001) sapphire substrates at various substrate temperature by pulsed laser deposition (PLD) in a high vacuum chamber. Low pressure (1.6 mPa) and high reactivity oxygen plasma was introduced as reaction gas. The films were used to fabricate metal-semiconductor-metal (MSM) solar-blind photodetectors by electron-beam evaporation. The beta-Ga2O3 -based photodetector exhibited high performance with a low dark current (about 40 pA), fast response speed (tau(rise): 0.17 s, tau(decay): 0.03 s) and high responsivity (0.35 A/W). These results represent the high quality of beta-Ga2O3 films and excellent performance for PLD-grown beta-Ga2O3 -based MSM solar-blind photodetectors.

Automated summary

High-quality beta-Ga2O3 films were grown on (0001) sapphire substrates at various substrate temperatures using pulsed laser deposition in a high vacuum chamber. The films were used to fabricate metal-semiconductor-metal solar-blind photodetectors with low dark current, fast response speed, and high responsivity. These results demonstrate the high quality and excellent performance of PLD-grown beta-Ga2O3-based MSM solar-blind photodetectors.