期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 50, 期 3, 页码 1083-1089出版社
SPRINGER
DOI: 10.1007/s11664-020-08619-4
关键词
Tin whisker; Ti2SnC; ceramic; nucleation; morphology; mechanism
资金
- China Postdoctoral Science Foundation [2019M661687]
- National Natural Science Foundation of China (NSFC) [52001158, 51902051, 51731004]
- International Postdoctoral Exchange Program of Southeast University
- Fundamental Research Funds for the Central Universities
The research found that tin whisker growth propensity increases at higher temperatures or in an oxidizing atmosphere, and whisker nucleation can be accelerated at elevated temperatures. Furthermore, whiskers formed in argon gradually evolve into a faceted morphology driven by the reduction of surface energy. These findings provide valuable insights into tin whisker growth.
Tin whisker growth behavior has resisted interpretation for approximately 70 years due to many intricate influencing factors and its unpredictability. In this work, tin whisker growth behavior on Ti2SnC under different cultivation conditions was investigated to understand the underlying mechanisms. It was found that higher tin whisker growth propensity is reached at higher cultivation temperature or in an oxidizing cultivation atmosphere, and whisker nucleation can be accelerated at elevated temperature. Furthermore, the whiskers formed in argon gradually evolve into a faceted morphology, which is driven by the reduction of surface energy. The findings herein provide valuable clues of tin whisker growth.
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