期刊
JOURNAL OF CRYSTAL GROWTH
卷 554, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2020.125944
关键词
Fluid flows; Growth from vapor; Chemical vapor deposition processes; Inorganic compounds; Semiconducting silicon compounds
资金
- DMSRDE, Kanpur [TR/0569/CARS/115]
This study presents the 3D modeling and optimization of a commercial hot wall vertical reactor for SiC coating, investigating the impact of various process parameters on hydrodynamic stability. It was found that buoyancy-driven flow can occur inside the reactor at high Reynolds number and Gr/Re-2 ratio. Process optimization using response surface methodology significantly reduced the number of experiments and simulations required for optimizing the CVD process.
In this paper, the 3D modeling and optimization of a commercial hot wall vertical reactor for SiC coating is presented to investigate the effect of various process parameters on the hydrodynamic stability of the CVD reactor. The correlation between experimental and simulated results was established by tuning the kinetic parameters for the surface reaction. Besides, the incorporation of various dimensional numbers such as Reynolds number (Re), Pecletn umber (Pe), and Grashof number (Gr) enabled the systematic investigation of the effect of the natural convection phenomena on film growth performance, It was found that the buoyancy-driven flow can occur inside the reactor at a high Reynolds number and Gr/Re-2 ratio. The process optimization was performed using response surface methodology (RSM) to obtain the desired film quality. The CFD-RSM collaborative approach allowed a significant reduction in the number of experiments and simulations required to optimize the CVD process.
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