Porous SiC electroluminescence from p-i-n junction and a lateral carrier diffusion model

Electroluminescence of porous silicon carbide is achieved in a forward-biased SiC p-i-n junction. A broad green spectral feature centered at similar to 510nm is shown to arise from porous SiC. A large SiC surface area in the vicinity of the junction is created by diamond cutting followed by an electrochemically enhanced hydrogen fluoride etch that produces a layer of porous SiC. Photoluminescence is shown not to be responsible for the green emission. This supports the model of carrier recombination at the porous region via lateral bipolar diffusion of carriers. A lateral bipolar diffusion model is presented in which mobile carriers diffuse laterally from the junction toward the porous SiC surface region driven by a lateral carrier concentration gradient. Lateral bipolar diffusion in conjunction with suitable radiative recombination centers provides a possible pathway to achieve high quantum efficiencies in future SiC p-n homojunction or double heterojunction light-emitting diodes. Competing recombination processes and associated ideality factors in 4H-SiC diodes are also examined.

Automated summary

Electroluminescence of porous silicon carbide is achieved in a forward-biased SiC p-i-n junction, showing a broad green spectral feature centered at around 510nm from porous SiC. The lateral bipolar diffusion model of mobile carriers and suitable radiative recombination centers provide a possible pathway to achieve high quantum efficiencies in future SiC light-emitting diodes. Competitive recombination processes and associated ideality factors in 4H-SiC diodes are also evaluated.