期刊
JOURNAL OF APPLIED PHYSICS
卷 129, 期 3, 页码 -出版社
AIP Publishing
DOI: 10.1063/5.0033205
关键词
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资金
- Deutsche Forschungsgemeinschaft (DFG) under the scheme of the collaborative research center [(CRC)1261]
- Federal Ministry of Education and Research (BMBF) [16ES1053]
- DFG project Berlin EM Network [KO2911/12 1]
This study presents atomic-scale evidence for ferroelectric polarization inversion in a wurtzite-type material using epitaxial Al0.75Sc0.25N thin films. The electric field-induced formation of Al-polar inversion domains in the originally N-polar film is confirmed by atomic resolution imaging and anisotropic etching. The epitaxial relationship of the sapphire/AlN/Mo/AlScN multilayer stack is discussed with results from electron diffraction experiments and XRD pole figures.
This work presents the first atomic scale evidence for ferroelectric polarization inversion on the unit cell level in a wurtzite-type material based on epitaxial Al0.75Sc0.25N thin films. The electric field induced formation of Al-polar inversion domains in the originally N-polar film is unambiguously determined by atomic resolution imaging using aberration-corrected scanning transmission electron microscopy (STEM). Anisotropic etching supports STEM results confirming a complete and homogenous polarization inversion at the film surface for the switched regions and the virtual absence of previous inversion domains in as-deposited regions. Local evidence of residual N-polar domains at the bottom electrode interface is observed and can be explained by both stress gradients and electric field deflection. The epitaxial relationship of the sapphire/AlN/Mo/AlScN multilayer stack is discussed in detail. Selected-area electron diffraction experiments and XRD pole figures reveal a Pitsch-Schrader type orientation relation between the Mo electrode and the AlScN film.
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