期刊
JOURNAL OF APPLIED PHYSICS
卷 128, 期 23, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5143276
关键词
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资金
- U.S. Department of Energy (DOE) [DE-EE0008204]
- National Science Foundation (NSF) [DMS-1839077]
- Simons Foundation [601952, 601954]
- Ministry of Science and Technology in Taiwan [MOST 108-2628-E-002-010-MY3, MOST 110-2923-E-002-002]
- NSF MRSEC Program of the NSF [DMR 11-21053]
- NSF
- Air Force Office of Scientific Research [FA9550-19-1-10090]
Until recently, the electrical efficiency of green nitride light-emitting diodes (LEDs) was considerably lower than that of blue LEDs. This is particularly surprising as one would expect a reduced forward voltage with increasing emission wavelength. In this paper, we theoretically investigated the impact of the number of quantum wells on the forward voltage of III-nitride LEDs with x=0.15 (blue) and x=0.24 (green) InxGa1-xN QWs. The simulated dependence of current density (J) on applied diode bias (V) shows a significant increase of 1.9V in the forward voltage between one and five quantum well (QW) c-plane green LED structures. Artificially turning off the polarization fields in the simulation does not entirely suppress this effect. Due to the large band offsets in the green LED multiple QW stack, simulations indicate a sequential band filling of the QW sequence. This mechanism should not be limited to c-plane LEDs and could also be present in nonpolar or semipolar devices.
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