Association of structure and modulated optoelectronic property in Sb doped Zn2SnO4 nanostructured films for transparent electrodes

( )This work reports structure property correlations for spin coated Zn2-xSbxSnO4 nanostructured films. X-ray diffraction confirms the polycrystalline structure and the Raman spectra reveal symmetric stretching of Zn-O at similar to 667 cm(-1) for inverse spinel structure of Zn2SnO4 (ZTO) films. X-ray photoelectron spectroscopy elucidates binding energy and charge states for the participating atoms. The maximum transmittance of similar to 84 % at 550 nm and optical gap of 4.27 eV has been observed for x = 0.08 sample. Carrier concentration was found to increase by four orders (3.32 x 10(22)) and carrier mobility (3.0 m(2)/V-s) decreases by two order to favour the minimum electrical resistivity (similar to 10(-3) Omega-cm) and maximum Haacke's figure of merit (1.4 x 10(-3) Omega(-1)) for x = 0.08 sample. These results are very important in elucidating the nature of Sb dopant in ZTO system for new alternative transparent conductors for highly efficient optoelectronic devices in the future. (C) 2020 Elsevier B.V. All rights reserved.