Heterogeneous GaN-Si integration via plasma activation direct bonding

Direct bonding of GaN and Si substrates at 125 degrees C under atmospheric conditions was investigated by different Plasma activation bonding (PAB) methods. The substrates activated by a sequential oxygen and nitrogen plasma were strongly bonded so that the fracture within GaN bulk occurred during strength measurement. A -3-nm-thick amorphous layer consisting of GaOx and SiOx was confirmed at the bonding interface. This plasma-assisted low-temperature direct bonding may shed light on the advanced electronic devices using the GaN-Si heterostructure. (C) 2020 Elsevier B.V. All rights reserved.

Automated summary

Research investigated the direct bonding of GaN and Si substrates at 125 degrees C under atmospheric conditions using various Plasma activation bonding (PAB) methods. The substrates activated by sequential oxygen and nitrogen plasma formed a strong bond, causing fracture within the GaN bulk during strength measurement. An amorphous layer of GaOx and SiOx was confirmed at the bonding interface. This plasma-assisted low-temperature direct bonding may offer insights for advanced electronic devices utilizing the GaN-Si heterostructure.