期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 60, 期 3, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.35848/1347-4065/abe015
关键词
Nanowires; Conductivity of elemental Semiconductors; Impurity and defect levels in elemental Semiconductors; Optical properties of Nanowires
资金
- Japan Science and Technology Agency (JST) [141158-229-007001]
The current-voltage characteristics of trigonal selenium nanowire crystals made via immersion in ethanol were studied, revealing a steep increase in current at the trap-filled limit voltage. Analysis based on a three-dimensional model estimated trap concentration and trap energy, compared with trap levels obtained from a photocurrent spectrum analysis. Different trap levels were attributed to deformation, OH- stretching mode, and CH- stretching mode.
The current-voltage (I-V) characteristics of trigonal selenium (t-Se) nanowire (NW) crystals made via immersion in ethanol have been studied. A steep increase in current at the trap-filled limit voltage is observed in the I-V curve of t-Se NWs with a space-charge-limited current. From an analysis of the I-V characteristics based on a three-dimensional model, the trap concentration and trap energy are estimated to be 6.8 x 10(12) cm(-3) and 0.60 eV, respectively. It is compared with trap levels of 0.59, 0.42, and 0.37 eV obtained from an analysis of the photocurrent spectrum of t-Se NWs, which can be attributed to the deformation, OH- stretching mode, and CH- stretching mode, respectively.
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