相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4-to 8.6-eV alpha-(AlGa)(2)O-3 on m-plane sapphire
Riena Jinno et al.
SCIENCE ADVANCES (2021)
Prospects for n-type doping of (AlxGa1-x)2O3 alloys
Joel B. Varley et al.
APPLIED PHYSICS LETTERS (2020)
MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1-x)2O3 with High-Al Composition on (100) β-Ga2O3 Substrates
A. F. M. Anhar Uddin Bhuiyan et al.
CRYSTAL GROWTH & DESIGN (2020)
Thermal stability of α-Ga2O3 films grown on c-plane sapphire substrates via mist-CVD
Riena Jinno et al.
AIP ADVANCES (2020)
MOCVD epitaxy of β-(AlxGa1-x)2O3 thin films on (010) Ga2O3 substrates and N-type doping
A. F. M. Anhar Uddin Bhuiyan et al.
APPLIED PHYSICS LETTERS (2019)
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
J. Y. Tsao et al.
ADVANCED ELECTRONIC MATERIALS (2018)
Structural and electronic properties of Ga2O3-Al2O3 alloys
Hartwin Peelaers et al.
APPLIED PHYSICS LETTERS (2018)
Evaluation of band alignment of α-Ga2o3/α-(AlxGa1-x)2O3 heterostructures by X-ray photoelectron spectroscopy
Takayuki Uchida et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2018)
Control of Crystal Structure of Ga2O3 on Sapphire Substrate by Introduction of -(AlxGa1-x)2O3 Buffer Layer
Riena Jinno et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2018)
A review of Ga2O3 materials, processing, and devices
S. J. Pearton et al.
APPLIED PHYSICS REVIEWS (2018)
Bandgap engineering of α-(AlxGa1-x)2O3 by a mist chemical vapor deposition two-chamber system and verification of Vegard's Law
G. T. Dang et al.
APPLIED PHYSICS LETTERS (2018)
Atomically stepped, pseudomorphic, corundum-phase (Al1-xGax)2O3 thin films (0 ≤ x < 0.08) grown on R-plane sapphire
Michael Lorenz et al.
APPLIED PHYSICS LETTERS (2018)
Review-Ultra-Wide-Bandgap AlGaN Power Electronic Devices
R. J. Kaplar et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)
Reduction in edge dislocation density in corundum-structured α-Ga2O3 layers on sapphire substrates with quasi-graded α-(Al,Ga)2O3 buffer layers
Riena Jinno et al.
APPLIED PHYSICS EXPRESS (2016)
Polarization-induced electrical conductivity in ultra-wide band gap AlGaN alloys
Andrew M. Armstrong et al.
APPLIED PHYSICS LETTERS (2016)
Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices
Shizuo Fujita et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Enhanced thermal stability of alpha gallium oxide films supported by aluminum doping
Sam-Dong Lee et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2015)
Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts
Kohei Sasaki et al.
APPLIED PHYSICS EXPRESS (2013)
Structures of Uncharacterised Polymorphs of Gallium Oxide from Total Neutron Diffraction
Helen Y. Playford et al.
CHEMISTRY-A EUROPEAN JOURNAL (2013)
Thermal stability of single crystalline alpha gallium oxide films on sapphire substrates
Sam-Dong Lee et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11 (2013)
Electrical Conductive Corundum-Structured α-Ga2O3 Thin Films on Sapphire with Tin-Doping Grown by Spray-Assisted Mist Chemical Vapor Deposition
Kazuaki Akaiwa et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2012)
Sensing Using Piezoelectric Chiral Polymer Fiber
Syuhei Ito et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2012)
Epitaxial Nd-doped α-(Al1-xGax)2O3 films on sapphire for solid-state waveguide lasers
Raveen Kumaran et al.
OPTICS LETTERS (2010)
Heteroepitaxy of corundum-structured alpha-Ga2O3 thin films on alpha-Al2O3 substrates by ultrasonic mist chemical vapor deposition
Daisuke Shinohara et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2008)
Structures and energetics of Ga2O3 polymorphs
S. Yoshioka et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2007)
First-principles study of the structural, electronic, and optical properties of Ga2O3 in its monoclinic and hexagonal phases
Haiying He et al.
PHYSICAL REVIEW B (2006)
分享论文
