Demonstration of Large-Size Vertical Ga2O3 Schottky Barrier Diodes

Large-size vertical beta-Ga2O3 Schottky barrier diodes (SBDs) with various device areas were demonstrated on a Si-doped n-type drift layer grown by hydride vapor phase epitaxy (HVPE) on bulk Sn-doped (001) n-type beta-Ga2O3 substrate. In this letter, the devices have two circular contacts with a diameter of 1500 and 500 mu m and two square contacts with dimensions of 1600 x 1600 mu m(2) and 800 x 800 mu m(2), corresponding to the area of 0.2 x 10(-2) cm(2) (the smallest device), 0.6 x 10(-2), 1.8 x 10(-2), and 2.6 x 10(-2) cm(2) (the largest device). The breakdown voltage (BV) was determined to be -261 V for the largest device and -427 V for the smallest device. Also, the ideality factor (eta) of vertical Ga2O3 SBDs with different device areas exhibited the same value of 1.07, except for the largest device area of 2.6 x 10(-2) cm(2) with an ideality factor of 1.21. At an applied forward bias of V-F= 2 V, the specific on-state resistance (R(on)A) of all the Ga2O3 SBDs remains relatively low with values ranging from 1.43 x 10(-2) omega cm(2) to 7.73 x 10(-2) omega cm(2). The measured turn-on voltage (V-on) of all the SBDs remains low with a narrow distribution.

Automated summary

This study demonstrated large-size vertical beta-Ga2O3 Schottky barrier diodes on a Si-doped n-type drift layer grown on a bulk Sn-doped beta-Ga2O3 substrate, with various device areas showing different breakdown voltages and ideality factors while maintaining relatively low specific on-state resistance.