4H-SiC p-n Junction-Based Near IR Photon Source

We propose a Near Infra Red photon emitting 4H-SiC compact vertical pn diode. The as fabricated diode exhibits a strong visible emission at 500 nm associated with the intrinsic and/or processing induced D1 centers in the semiconductor. Thanks to opportune He+ ion irradiation, we are able to obtain color centers in the junction region responsible for photon emission around 900 nm while simultaneously quenching unwanted visible emission. Electro-optical investigation was conducted by Electro-Luminescence measurements in the 300 nm -1100 nm range and by Emission Microscopy, both with pumping a current between of 0.1 and 2 mA. The proportionality of the emission intensity to the pumping current opens the interesting perspective of engineering the concentration of defects with the aim of obtaining single defects and thus single photon source devices. This is of considerable interest in low-power proximity sensors for consumer, industrial, automotive and telecommunications applications.

Automated summary

By He+ ion irradiation, color centers in the 4H-SiC compact vertical pn diode are achieved, enhancing the efficiency of Electro-Luminescence measurements and Emission Microscopy. The proportionality of emission intensity to pumping current provides interesting possibilities for engineering defect concentration and obtaining single photon source devices, particularly suitable for low-power proximity sensors.