期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 32, 期 24, 页码 1527-1530出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2020.3039299
关键词
MoS2; ZnO; photodiode; blending ratio; responsivity and external quantum efficiency
In this article, the effect of MoS2 and ZnO blend ratio on the performance of MoS2:ZnO hybrid photodiodes is investigated. The UV and visible performance parameters for five different devices consisting of semiconducting layers like MoS2, ZnO, MoS2:ZnO (1:1), MoS2:ZnO (1:2), and MoS2:ZnO (2:1) each are analyzed. The device MoS2:ZnO (1:2) shows the best performance in the UV region with a responsivity of 17.04 A/W, detectivity of 6.84 x10(13) Jones and external quantum efficiency (EQE) of 6604% at 320nm, -1 V bias. On the other hand, the device MoS2:ZnO (2:1) gives the best performance in the visible region with a responsivity of 2.27 A/W, detectivity of 0.60 x 1013 Jones, and EQE of 533% at 529nm, -1 V.
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