Conduction Mechanisms of Metal-Ferroelectric- Insulator-Semiconductor Tunnel Junction on N- and P-Type Semiconductor

Conduction mechanisms of ferroelectric tunnel junction (FTJ) using metal-ferroelectric-insulator- semiconductor (MFIS) on n- and p-type semiconductor is clarified by a new developed model, which is verified by the experimental results. In the model, electron tunneling from conduction band and valence band, and hole tunneling from valence band are included to calculate the read current in ON/OFF-state of MFIS-FTJ. The model explains the unexpected polarization polarity of ON/OFF-state in p-type and the difference of tunneling electroresistance (TER) ratio between n- and p-type MFIS-FTJ, which cannot be understood just by the depletion/accumulation for majority carriers in semiconductor.

Automated summary

The conduction mechanisms of ferroelectric tunnel junctions (FTJs) using metal-ferroelectric-insulator-semiconductor (MFIS) structures on n- and p-type semiconductors are clarified by a newly developed model, which has been verified by experimental results. The model includes electron tunneling from the conduction and valence bands, as well as hole tunneling from the valence band, to calculate the read current in the ON/OFF state of MFIS-FTJs. The model explains the unexpected polarization polarity of the ON/OFF state in p-type semiconductors and the difference in tunneling electroresistance (TER) ratio between n- and p-type MFIS-FTJs.