期刊
IEEE ELECTRON DEVICE LETTERS
卷 41, 期 12, 页码 1825-1828出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2020.3030797
关键词
Resonators; Resonant frequency; Resonator filters; Electrodes; Surface acoustic waves; Substrates; Admittance; Surface acoustic wave; shear horizontal; lithium niobate on insulator (LNOI); piezoelectric; resonators
资金
- Ministry of Science and Technology (MOST) of Taiwan (Young Scholar Fellowship Program) [MOST 109-2636-E-007-023]
In this work, wide band radio-frequency (RF) shear-horizontal surface acoustic wave (SH-SAW) resonators were designed and fabricated to attain a large effective electromechanical coupling (k(2)) over 35% near 1-GHz based on a thin-film lithium niobate (LiNbO3/LN) on insulator layered substrate. In this study, the single-crystalline LiNbO3 thin film was bonded to a (100)-silicon carrier wafer with an intermediate silicon dioxide (SiO2) layer to form a simple and low-cost hetero acoustic impedance waveguide. Fabricated resonators with Au-electrodes show scalable wavelengths from 3.2 mu m to 4.4 mu m (770 to 1008 MHz) featuring k(2) > 35% and Q of 250, which are sufficient for wide band RF filtering applications. Additionally, the potential of the SH-SAW resonator is demonstrated by a numerically synthesized ladder filter with a center frequency of 970 MHz, a 3-dB fractional bandwidth of 29.6%, and an insertion loss (IL) around 1.8 dB. It suggests the feasibility of developing wide bandwidth acoustic RF devices for potential 5G wireless communication through further design and fabrication optimizations.
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