Electrical joule heating for the isolation of ZnO nanowire channel and subsequent high-performance 1D circuit integration

In this work, electrical Joule heating (J-H) was employed for the first time to electrically isolate ZnO nanowire FETs array for one dimensional (1D) logic applications without any physical and electrical damages. The electrical properties of the isolated nanowire FETs were found to be superior to non-isolated FETs came from the neighboring gate effect. Finally, we investigated ZnO nanowire-based NOT, NAND, and NOR logic gates with the J-H nanowire isolation technique. The isolated logic gates clearly show much lower output voltage off level than the non-isolated circuits thus resulting in more accurate and reliable 1D electronic applications.