相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Effect of sweeping direction on the capacitance-voltage behavior of sputtered SiO2/4H-SiC metal-oxide semiconductors after nitric oxide post-deposition annealing
Suhyeong Lee et al.
PHYSICA SCRIPTA (2019)
Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors
Patrick Fiorenza et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2018)
Effects of post-deposition annealing on sputtered SiO2/4H-SiC metal-oxide-semiconductor
Suhyeong Lee et al.
SOLID-STATE ELECTRONICS (2018)
Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements
Eigo Fujita et al.
AIP ADVANCES (2018)
Interface chemistry and electrical characteristics of 4H-SiC/SiO2 after nitridation in varying atmospheres
Anna Regoutz et al.
JOURNAL OF MATERIALS CHEMISTRY C (2018)
High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide
Victor Soler et al.
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS (2017)
Fabrication of 4H-SiC lateral double implanted MOSFET on an on-axis semi-insulating substrate without using epi-layer
Hyoung Woo Kim et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2017)
Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements
Patrick Fiorenza et al.
APPLIED PHYSICS LETTERS (2016)
The Current Status and the Future Prospects of Surface Passivation in 4H-SiC Transistors
Amna Siddiqui et al.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY (2016)
Effects of combined NO and forming gas annealing on interfacial properties and oxide reliability of 4H-SiC MOS structures
Zhaoyang Peng et al.
MICROELECTRONICS RELIABILITY (2016)
Improved 4H-SiC metal oxide semiconductor interface produced by using an oxidized SiN gate oxide that had undergone post-oxidation annealing
Jeong Hyun Moon et al.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY (2014)
Effect of Postoxidation Annealing on High Temperature Grown SiO2/4H-SiC Interfaces
Jeong Hyun Moon et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2010)
MOS capacitors obtained by wet oxidation of n-type 4H-SiC pre-implanted with nitrogen
A. Poggi et al.
MICROELECTRONIC ENGINEERING (2007)
A study of the influence of the of the annealing processes and interfaces with deposited SiO2 from tetra-ethoxy-silane for reducing the thermal budget in the gate definition of 4H-SiC devices
A. Perez-Tomas et al.
THIN SOLID FILMS (2006)
Electrical and physical characterization of gate oxides on 4H-SiC grown in diluted N2O
KY Cheong et al.
JOURNAL OF APPLIED PHYSICS (2003)
Study on electron trapping and interface states of various gate dielectric materials in 4H-SiC metal-oxide-semiconductor capacitors
W Cho et al.
APPLIED PHYSICS LETTERS (2000)
Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
GY Chung et al.
APPLIED PHYSICS LETTERS (2000)
分享论文
