Ti-doping induced antiferroelectric to ferroelectric phase transition and electrical properties in Sm-PbZrO3 thin films

The antiferroelectric (Pb0.985Sm0.01) (Zr1-xTix)O-3 (Ti-PSZO) thin films were synthesized on Pt(111)/Ti/SiO2/Si substrates using a chemical solution deposition method. The films were crystallized in the perovskite phase with a preferential orientation along (111) direction. With Ti doping in PSZO, a gradual transformation from antiferroelectric to ferroelectric phase transition was noticed at room temperature owing to the Ti doping induced lattice distortion. The phase transition has been confirmed through the P - E hysteresis loops, X-ray diffraction (peak shifting), capacitance-voltage measurements, and Raman scattering analysis. The thin film with Ti = 0.15 doping displayed a ferroelectric behavior with high dielectric constant and large dielectric tunability of about 62%. Also, Ti doping altered the Curie temperature (T-c) and enhanced the order of dielectric diffuseness. It is believed that Ti-doping in PSZO is an effective way to induce an antiferroelectric - ferroelectric phase transition and to tailor the electrical characteristics of PSZO thin films.

Automated summary

The study successfully induced an antiferroelectric - ferroelectric phase transition in PSZO thin films through Ti doping, confirming the phase transition with various experimental techniques, and observing ferroelectric behavior with high dielectric constant and large dielectric tunability. Additionally, Ti doping altered the Curie temperature of the material and enhanced the order of dielectric diffuseness.