期刊
COMPUTATIONAL MATERIALS SCIENCE
卷 186, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.commatsci.2020.110014
关键词
Tip inclination; Tip-based nanomanufacturing; Scratching orientation; Single-crystal silicon
资金
- National Natural Science Foundation of China [51705104, 51911530206]
- China Postdoctoral Science Foundation [2017M610206, 2018T110289]
- Heilongjiang Postdoctoral Fund [LBH-Z16079, LBH-TZ1703]
- Fundamental Research Funds for the Central Universities [HIT. NSRIF. 2018 35]
- Self-Planned Task of State Key Laboratory of Robotics and System (HIT) [SKLRS202001C]
The tip inclination and scratching direction have significant influences on groove generation and scratching forces in the nanomanufacturing process of single crystal silicon. The plastic behavior is also dependent on the combination effect of the tip inclination and scratching direction.
Three-dimensional molecular dynamics simulations have been performed to investigate the combination effect of the tip inclination and scratching direction on the tip-based nanomanufacturing (TBN) process of single crystal silicon. Three typical scratching directions, edge forward (EF), face forward (FF), and side-face forward (SFF), were considered in the TBN processes. By analyzing the variation of the projected area of the tip, groove morphology, and silicon atomic flow behavior, the simulation results showed that the tip inclination and scratching direction had significant influences on groove generation, which is caused by the various atomic flow directions for scratching with different inclination angles and scratching directions. The change of the contact area induced by the tip inclination and scratching direction was the main reason for the variation of the scratching forces, and the normal forces were more sensitive than the tangential forces. Moreover, the plastic behavior, including the hydrostatic stress distribution, phase transformation, and the amorphous silicon distribution, were also dependent on the combination effect of the tip inclination and scratching direction. The results will provide important guidance for the process of TBN on silicon materials.
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