4.5 Article

Atomistic investigation on the mechanical properties and failure behavior of zinc-blende cadmium selenide (CdSe) nanowire

期刊

COMPUTATIONAL MATERIALS SCIENCE
卷 186, 期 -, 页码 -

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ELSEVIER
DOI: 10.1016/j.commatsci.2020.110001

关键词

ZB CdSe NW; Mechanical properties; Fracture characteristics; Optoelectronic devices

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  1. Wayne State University

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The mechanical properties and fracture mechanism of zinc-blende CdSe nanowire were investigated through molecular dynamics simulations. Results showed that temperature increase led to a linear decrease in ultimate tensile strength and Young's modulus, while increase in cross-sectional area resulted in higher values. Different loading directions and defect types also influenced the mechanical behavior of the nanowire.
Understanding the mechanical properties of cadmium selenium (CdSe) nanowire has received intense research interest due to its versatile application in semiconductor industries. We investigated the tensile mechanical properties and fracture mechanism of zinc-blende CdSe nanowire (NW) through molecular dynamics simulations by considering the effects of temperature variation, NW size, different loading directions, vacancy defects, and strain rates. We found that both ultimate tensile strength (UTS) and Young's modulus (YM) linearly decrease with increasing temperature but increase with nanowire cross-sectional area. The [1 1 1]-directed CdSe NW shows the largest UTS, YM, and fracture toughness whereas, the lowest values are obtained for [1 0 0] direction. The largest failure strain is exhibited by [1 1 0] direction. The UTS is found more sensitive in the presence of Cd vacancy, while the YM is more sensitive to the removal of Se atoms. We noticed that at 100 K, the [1 0 0]-directed CdSe NW fails along {111} cleavage plane, however, at 600 K, both {111} and {100} cleavage planes activate and cause fracture at a lower strain value. Finally, both the fracture strength and strain increase with the increment in strain rates. The mechanical properties and fracture characteristics of the CdSe NW elucidated in this study will be a guide to design and fabricate CdSe-based optoelectronic and electronic devices.

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