期刊
COMPOSITE INTERFACES
卷 28, 期 11, 页码 1067-1080出版社
TAYLOR & FRANCIS LTD
DOI: 10.1080/09276440.2020.1855573
关键词
Aramid nanofiber; boron nitride nanosheet; thermal conductivity; dielectric loss; mechanical property
资金
- Postdoctoral Science Foundation of China [2018M643475]
- Postdoctoral Interdisciplinary Innovation Foundation of Sichuan University [0030304153008]
- Open Fund of the National Engineering Laboratory for Ultra High Voltage Engineering Technology [csgTRC[2018]Q1821B01]
- Fundamental Research Funds for the Central Universities [2020SCU12002]
A new strategy for preparing thermally conductive films by combining one-dimensional aramid nanofiber with two-dimensional edge-hydroxylated boron nitride nanosheet has been reported. The obtained ANF/OH-BNNS film exhibits ultrahigh in-plane thermal conductivity and excellent thermal properties, mechanical properties, and low dielectric loss. This finding holds great promise for the fabrication and practical application of thermal management materials in high-temperature electronics and devices.
Polymer-based dielectric films with desirable heat dissipation property hold great promise as thermal management materials in advanced electronics and high power devices. Herein, we report a new strategy for preparing thermally conductive films by synergistically combining one-dimensional (1D) aramid nanofiber (ANF) with 2D edge-hydroxylated boron nitride nanosheet (OH-BNNS) via a vacuum-assisted self-assembly technique. The obtained ANF/OH-BNNS film exhibits an ultrahigh in-plane thermal conductivity of 32.3 W m(-1)K(-1) at 40 wt% BNNS-OH loading, which is 3530% greater than that of the pure ANF film. The excellent thermal conductivity results from the special 'brick-and-mortar' layered structure of ANF/OH-BNNS, in which the increased contacting and overlapping of OH-BNNS promotes the formation of the thermal conduction pathways. In addition, the rigid ANFs act as bridges linking OH-BNNS by favorable hydrogen bonding interactions, which efficiently enhance phonon propagation and stress transfer in the film. Moreover, the ANF/OH-BNNS film simultaneously shows low dielectric loss (similar to 0.03), high tensile strength (similar to 88 MPa), and a high decomposition temperature (>510 degrees C). We believe that these findings are of great importance for the fabrication and practical application of thermal management materials in high-temperature electronics and devices.
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