TiOx-based self-rectifying memory device for crossbar WORM memory array applications

Resistive switching with a self-rectifying feature is one of the most effective solutions to overcome the crosstalk issue in a crossbar array. In this paper, a memory device based on Pt/TiOx/W structure with self-rectifying property is demonstrated for write-once-read-many-times (WORM) memory application. After programming, the devices exhibit excellent uniformity and keep in the low resistance state (LRS) permanently with a rectification ratio as high as 10(4) at +/- 1 V. The self-rectifying resistive switching behavior can be attributed to the Ohmic contact at TiOx/W interface and the Schottky contact at Pt/TiOx interface. The results in this paper demonstrate the potential application of TiOx-based WORM memory device in crossbar arrays.

Automated summary

This paper demonstrates a memory device based on Pt/TiOx/W structure with self-rectifying property for WORM memory application. After programming, the devices exhibit excellent uniformity and remain permanently in the low resistance state. The potential application of TiOx-based WORM memory device in crossbar arrays is shown in the results.