期刊
CHEMISTRY-A EUROPEAN JOURNAL
卷 27, 期 16, 页码 5259-5267出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/chem.202005360
关键词
aza-BODIPY; fluorescence; near infrared; organic light emitting diode; transient absorption spectroscopy
资金
- JSPS KAKENHI [JP15H01001, JP17H05160, JP19H02703, JP19H02790]
- Challenging Exploratory Research (JSPS KAKENHI) [JP18K19081, JP20K21227]
- Scientific Research on Innovative Areas, p-System Figuration: Control of Electron and Structural Dynamism for Innovative Functions (JSPS KAKENHI) [JP15H01001, JP17H05160, 2601]
- Murata Science Foundation
- National Research Foundation of Korea (NRF) - Korea government (MSIT) [2020R1A5A1019141]
- National Research Foundation of Korea [2020R1A5A1019141] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A bright NIR fluorescent molecule based on the D-A-D approach using TPA and PPAB showed enhanced performance, with increased brightness and solvatochromic behavior in emission. This novel emitter demonstrated high potential for efficient NIR optoelectronic applications.
A bright near-infrared (NIR) fluorescent molecule was developed based on the donor-acceptor-donor (D-A-D) approach using an aza-BODIPY analog called pyrrolopyrrole aza-BODIPY (PPAB) as an electron-accepting chromophore. Directly introducing electron-donating triphenylamine (TPA) to develop a D-A-D structure caused redshifts of absorption and emission of PPAB into the NIR region with an enhanced fluorescence brightness of up to 5.2x10(4) m(-1) cm(-1), whereas inserting a phenylene linker between the TPA donor and the PPAB acceptor induced solvatochromic behavior in emission. Transient absorption spectra and theoretical calculations revealed the presence of a highly emissive hybridized locally excited and charge-transfer state in the former case and the contribution of the dark charge-separated state to the excited state in the latter case. The bright D-A-D PPAB as a novel emitter resulted in a NIR electroluminescence with a high external quantum efficiency of 3.7 % and a low amplified spontaneous emission threshold of ca. 80 mu J cm(-2), indicating the high potential for NIR optoelectronic applications.
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