Atomic-layer-deposited SnO film using novel Sn(dmamb)2 precursor for p-channel thin film transistor

Atomic layer deposition of SnO was explored using a novel Sn complex, bis(dimethylamino-2methyl-2butoxy)tin (II) [Sn(dmamb)(2)], and H2O as the Sn precursor and reactant, respectively. Sn(dmamb)(2) showed a facile ligand exchange reaction with H2O at temperatures of 100-200 degrees C, which resulted in the fabrication of pure SnO thin films. Amorphous SnO films were obtained at all the investigated temperatures, but the pure Sn2+-O(2)(-)phase was observed only in the films produced at 100 and 150 degrees C. The amorphous SnO was crystallized by a rapid thermal annealing post-process in N-2 ambient at 450 degrees C. A bottom-gate thin film transistor was fabricated using a crystallized SnO channel layer, and excellent drain current modulation and p-type behavior were obtained, with an on/off ratio of similar to 7 x 10(4) and a saturation field effect mobility of 0.5 cm(2)/V.S

Automated summary

Utilizing a novel Sn complex and H2O as precursors, atomic layer deposition of high-quality SnO thin films was achieved, with amorphous SnO crystallized through rapid thermal annealing. A bottom-gate thin film transistor fabricated using a crystallized SnO channel layer exhibited excellent drain current modulation and p-type behavior.