Optimization of synthesis conditions of thin Te-doped InSb films and first principles studies of their physicochemical properties

The main objective of our study was to develop an electrochemical synthesis method for obtaining Te-doped InSb thin films. The electrodeposition was performed using a pulse mode in a citrate bath containing 0.06 M InCl3, 0.045 M SbCl3 and 0-0.008 M TeO2. Firstly, the optimization of following parameters was carried out: the potential of pulse off' (E-off), duration of pulse off' (t(off)), and the ratio of time on to time off (t(on)/t(off)). We have confirmed that appropriate selection of electrodeposition conditions allows obtaining a material with a controllable morphology and chemical composition. Based on performed studies, optimal parameters for electrodeposition of thin Te-doped InSb films were selected. In the next stage, the pulse electrodeposition of Tedoped InSb films at previously optimized conditions was conducted from a solution containing different concentrations of the TeO2 precursor. It was demonstrated that adjustment of the TeO2 content in the citrate bath allows controlling the dopant concentration in thin Te-doped InSb films. Such a controllable synthesis creates the opportunity for tuning physicochemical properties of the material. The effect of doping on the crystal structure, phase composition, surface roughness, and optical band gap of thin Te-doped InSb films was discussed in detail.

Automated summary

This study developed an electrochemical synthesis method for Te-doped InSb thin films, optimized the electrodeposition parameters, and discussed the effects of doping on the material properties.