期刊
APPLIED PHYSICS LETTERS
卷 117, 期 23, 页码 -出版社
AIP Publishing
DOI: 10.1063/5.0027785
关键词
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资金
- National Natural Science Foundation of China [61975224, 11474310, 61605237]
- Fund of Shanghai Natural Science Foundation [18ZR1445800]
- State Key Program of National Natural Science Foundation of China [61734008]
- China Postdoctoral Science Foundation [2019TQ0333]
- Jiangsu province [BE2016006-3, BK20150366, BK20150367, SYG201629]
- Suzhou city [BE2016006-3, BK20150366, BK20150367, SYG201629]
- Fund of Anhui Provincial Natural Science Foundation [2008085MF206]
Two-dimensional (2D) materials with excellent optoelectronic properties have attracted tremendous research interest in recent years. The promising performances of photodetectors based on 2D materials, such as ultrafast photoresponse and ultrahigh photoresponsivity, have been demonstrated in the visible to short-wavelength infrared spectrum range (0.8-2 mu m). However, high performance, room temperature operation long-wavelength infrared (LWIR) photodetection is challenging. The detectors based on graphene usually exhibit low photoresponsivity due to the low optical absorption and short carrier lifetime. In addition, the relatively large bandgap of transition metal dichalcogenides limited the photoresponse bandwidth. Here, we report a way to fabricate a scalable device array of room-temperature operation LWIR PtSe2-G heterostructure detectors. The photoresponsivity at 10.6 mu m up to similar to 300mA/W is obtained. The long-wave infrared light in the pico-watt range could be detected at room temperature by the PtSe2-G heterostructure detector. This result indicates that the PtSe2-G heterostructure device could be a highly competitive candidate for an uncooled LWIR detector. It also opens a way for a scalable array infrared focus plane device for the LWIR image.
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