期刊
APPLIED PHYSICS LETTERS
卷 117, 期 24, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/5.0029516
关键词
-
资金
- Korea Semiconductor Research Consortium Support Program for the development of the future semiconductor device [10067789]
- Samsung Electronics
- [NRF-2019M3F3A1A02071969]
- [NRF-2020M3F3A2A01081916]
We report on 4.5-nm-thick Hf0.5Zr0.5O2 (HZO) thin-film-based ferroelectric tunnel junctions (FTJs) with a tungsten (W) bottom electrode. The HZO on the W electrode exhibits stable ferroelectricity with a remanent polarization of 14 mu C/cm(2), an enhanced tunneling electroresistance of 16, and excellent synaptic properties. We found that a large tensile stress was induced on a HZO thin film, owing to a low thermal expansion coefficient of the W bottom electrode. The low thermal expansion coefficient results in the effective formation of an orthorhombic phase, even in an ultra-thin HZO film. This was verified by a comparative study of the electrical characteristics, grazing-angle incidence x-ray diffraction, and residual stress measurement of the HZO film on various bottom electrodes with different thermal expansion coefficients. In addition, this study demonstrates the suitable functions of the FTJ for electronic synapses, such as analog-like resistance transition under various pulse schemes. The fabricated stress-engineered FTJ exhibits an appropriate conductance ratio, linearly modulated long-term potentiation and depression characteristics, and excellent reliability. These characteristics render FTJs ideal electronic devices for neuromorphic computing systems. Published under license by AIP Publishing.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据